DMP1022UFDF/DMP2021UFDF P-Channel MOSFETs

Product Highlights > DMP1022UFDF/DMP2021UFDF P-Channel MOSFETs

            DMP1022UFDF/DMP2021UFDF P-Channel MOSFETs
                    Diodes' MOSFETs are specifically designed for load switching in high-efficiency battery management
    

Image of Diodes' DMP1022UFDF/DMP2021UFDF P-Channel MOSFETs Diodes Incorporated has enhanced its range of P-channel MOSFETs for load switching. Supplied in the small form-factor 2 mm x 2 mm DFN2020 package, DMP1022UFDF and DMP2021UFDF P-channel MOSFETs are rated at 12 V and 20 V, respectively. These devices are specifically designed for load switching for high-efficiency battery management in portable consumer electronics, such as the Internet of Things (IoT), tablets, smartphones, Ultrabooks, solid-state drives (SSDs), and hard-disk drives (HDDs).

Circuit designers looking for a simple and inexpensive solution to disable low-voltage power rails will appreciate the low guaranteed R_DS(ON) under low gate drive conditions. This enables power rails down to 1.5 V to be switched with minimal conduction losses. The DMP1022UFDF has an R_DS(ON) of <20 mΩ with a -2.5 V gate drive, while the DMP2021UFDF achieves <26 mΩ at -1.8 V gate drive. Switching off power to idle processor cores and other inactive circuitry using MOSFETs as high side load switches is a very effective method of extending battery life.

Features
Higher power density and reliability DFN2020 has a thermal resistance of only 10ºC/W enabling low die temperature to increase power density and device reliability Low on-resistance With the industry’s lowest R_DS(ON) at low gate drive, low-voltage power rails are enabled to be switched with minimal conduction losses		DFN2020: 4 mm² footprint and 0.6 mm profile Occupying only 4 mm², a 55% reduction against DFN3030, and off-board height of 0.6 mm making it ideal for space-critical and low-profile designs
Applications
IoT Ultrabooks Smartphones		Tablets SSDs HDDs